Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integration

Abstract

A back-illuminated planar embedded photodiode designed for integration into a high-bit-rate PINFET 1.2–1.6 μm optical receiver has been fabricated by nonmasked LPE growth on a profiled substrate. A p-n−-n+ structure provides low series resistance on both p- and n-sides. The electrical and optical performance is good, with a junction capacitance of 70 fF at −10 V.