The Mechanism of Oxidation of SiGe.
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Stresses and silicon interstitials during the oxidation of a silicon substratePhilosophical Magazine Part B, 1987
- Modelling of silicon oxidation based on stress relaxationPhilosophical Magazine Part B, 1987
- New results on low-temperature thermal oxidation of siliconPhilosophical Magazine Part B, 1987
- On the oxidation of siliconPhilosophical Magazine Part B, 1987