Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12A), L1710
- https://doi.org/10.1143/jjap.33.l1710
Abstract
We grew 1.3-µm emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots. Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.Keywords
This publication has 16 references indexed in Scilit:
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field inAs/InP quantum wellsPhysical Review B, 1993
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Excitons in quantum dots with parabolic confinementPhysical Review B, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Nanoelectronics: Fanciful physics or real devices?Journal of Vacuum Science & Technology B, 1989
- Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in SemiconductorsJapanese Journal of Applied Physics, 1989
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Zero-dimensional "excitons" in semiconductor clustersIEEE Journal of Quantum Electronics, 1986
- Mechanism for enhanced optical nonlinearities and bistability by combined dielectric–electronic confinement in semiconductor microcrystallitesOptics Letters, 1986