Abstract
A threshold for electron radiation damage in CdSe is observed at 250 keV. A fluorescence emission band is produced with a peak intensity at 1.25 μ. Only a slight amount of annealing takes place up to 125°C. Above 150°C the fluorescence band at 1.25 μ increases in intensity due to heat treatment alone. The fluorescence can be removed by annealing at 500°C in excess selenium or cadmium.