Depletion-mode GaAs MOS FET
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3), 207-208
- https://doi.org/10.1063/1.88995
Abstract
GaAs MOS field‐effect‐transistors (FET’s) have been fabricated by the anodic oxidation of liquid‐phase epitaxial layers of GaAs grown on semi‐insulating substrates. This letter reports on the characteristics of these devices operating in the depletion mode.Keywords
This publication has 4 references indexed in Scilit:
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- New anodic native oxide of GaAs with improved dielectric and interface propertiesApplied Physics Letters, 1975
- Improved method of anodic oxidation of GaAsElectronics Letters, 1975
- Gallium arsenide MOS transistorsSolid-State Electronics, 1965