An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate

Abstract

A dislocation-free GaAs epitaxial layer without propagating dislocations from a substrate or misfit dislocations is developed on an indium-doped semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The epitaxial layer is doped with indium to reduce lattice mismatch between the layer and substrate. Photoluminescence measurements confirm that the indium-doped dislocation-free GaAs epitaxial layer has good photoluminescence efficiency. This dislocation-free GaAs epitaxial layer promises to play an important role in achieving a GaAs/AlGaAs optoelectric integrated circuit (OEIC).