Temperature dependence of sharp line photoluminescence in GaAsAl0.25Ga0.75As multiple quantum well structures
- 30 April 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (2), 159-162
- https://doi.org/10.1016/0038-1098(85)91142-1
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structuresPhysical Review B, 1984
- Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffersApplied Physics Letters, 1984
- Photoluminescence of AlxGa1-xAs/AlyGa1-yAs Multiguantum Wells Grown by Pulsed Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1983
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982
- Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wellsSolid State Communications, 1982
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7–0.8 µm Wavelength RegionJapanese Journal of Applied Physics, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructuresSolid State Communications, 1980
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970