Effect of fluorine on dielectric properties of SiOF films
- 1 November 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (9), 5260-5263
- https://doi.org/10.1063/1.363512
Abstract
The effect of fluorine addition on silicon oxide film properties as a function of SiF4/O2 gas flow ratio was investigated. The films were deposited by using electron cyclotron resonance plasma chemical vapor deposition with SiF4 and O2 as source gases diluted in Ar. Characterization of films was carried out in terms of various gas flow ratios (SiF4/O2=0.2–1.0). The microwave power and substrate temperature during deposition were fixed at 700 W and 300 °C, respectively. The chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), fluorine concentration by x‐ray photoelectron spectroscopy, and refractive index by ellipsometry. The dielectric constant was determined from C–V measurements at 1 MHz. FTIR spectra show that as the fluorine concentration increased, the intensities of the Si–F bonding peak and the shoulder peak (at around 1160 cm−1) of the Si–O stretching mode both increased. Refractive index and deposited film density decreased with increasing SiF4/O2 gas flow ratio. The SiOF film deposited at a SiF4/O2 gas flow ratio of 1.0 exhibited a fluorine content of 11.8 at. % and a dielectric constant of 3.14.Keywords
This publication has 7 references indexed in Scilit:
- Effect of porosity on infrared-absorption spectra of silicon dioxideJournal of Applied Physics, 1995
- MOSFET test structures for two-dimensional device simulationSolid-State Electronics, 1995
- Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon OxideJapanese Journal of Applied Physics, 1994
- A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel InterconnectionsJournal of the Electrochemical Society, 1993
- Atomic structure in SiO2 thin films deposited by remote plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1989
- Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxideJournal of Vacuum Science & Technology B, 1989
- Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986