Biexciton effects in femtosecond nonlinear transmission of semiconductor quantum dots
- 15 September 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (11), 8110-8113
- https://doi.org/10.1103/physrevb.50.8110
Abstract
The dynamics of carrier-induced absorption changes in CdSe quantum dots are investigated with femtosecond spectroscopy. After excitation with 4-eV photons a redshift of the lowest optical transition is observed in the initial phase of carrier relaxation. This shift is attributed to a biexciton effect where two electron-hole pairs interact via the Coulomb potential.Keywords
This publication has 23 references indexed in Scilit:
- Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitionsJournal of the Optical Society of America B, 1993
- Surface-polarization instabilities of electron-hole pairs in semiconductor quantum dotsPhysical Review B, 1992
- Coulomb effects and optical properties of semiconductor quantum dotsJournal of Crystal Growth, 1992
- Nonparabolicity of the conduction band in CdSe and CdSxSe1−x semiconductor microcrystallitesSolid State Communications, 1991
- Image charges in semiconductor quantum wells: Effect on exciton binding energyPhysical Review B, 1990
- QUANTUM CONFINEMENT AND COULOMB EFFECTS IN SEMICONDUCTOR QUANTUM DOTSModern Physics Letters B, 1990
- Theory of optically excited intrinsic semiconductor quantum dotsPhysical Review B, 1990
- Confined excitons, trions and biexcitons in semiconductor microcrystalsSolid State Communications, 1989
- Electronic structures of zero-dimensional quantum wellsPhysical Review B, 1989
- Donor-like exciton in zero-dimension semiconductor structuresSolid State Communications, 1989