Luminescence above the gap in heavily Zn-doped GaAs
- 31 December 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (11), 1027-1030
- https://doi.org/10.1016/0038-1098(79)90822-6
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electrical transport and band structure of GaAsCanadian Journal of Physics, 1979
- Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)Solid State Communications, 1978
- Uniaxial stress measurements on n-type GaAsSolid State Communications, 1978
- Piezoresistance and the conduction-band minima of GaAsPhysical Review B, 1978
- Uniaxial stress investigations of the three-level conduction band structure of GaAsJournal of Physics C: Solid State Physics, 1977
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Uniaxial stress apparatus with analog pressure readoutReview of Scientific Instruments, 1974
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968