Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
- 1 March 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 41 (3), 247-259
- https://doi.org/10.1016/0040-6090(77)90312-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor DevicesJournal of the Electrochemical Society, 1976
- Selected Properties of Pyrolytic Ta[sub 2]O[sub 5] FilmsJournal of the Electrochemical Society, 1973
- Rapid nondestructive method for measuring the refractive index and thickness of thin dielectric filmsJournal of Physics E: Scientific Instruments, 1973
- Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. IJournal of Crystal Growth, 1972
- Preparation and Properties of Pyrolytic Zirconium Dioxide FilmsJournal of the Electrochemical Society, 1971
- Preparation and Properties of Sputtered Hafnium and Anodic HfO[sub 2] FilmsJournal of the Electrochemical Society, 1970
- Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin FilmsJournal of the Electrochemical Society, 1969
- Tetrakis(1,1,1-trifluoro-2,4-pentanedionato)zirconium(and Hafnium)Published by Wiley ,1967
- Infrared Absorption Spectroscopy in Zirconia ResearchJournal of the American Ceramic Society, 1964
- Infra-red Absorption in SemiconductorsReports on Progress in Physics, 1956