Differentiated electron-beam-induced current (DEBIC): Quantitative characterization of semiconductor heterostructure lasers
- 1 January 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1), 538-540
- https://doi.org/10.1063/1.325648
Abstract
Differentiated electron‐beam‐induced current (DEBIC) is shown to be well suited for the study of semiconductor heterostructure lasers. The DEBIC signal, unlike the standard EBIC signal, is rich in fine‐structure information in the vicinity of the active region. A simple model is introduced to explain the characteristic DEBIC signal. As a result of the anisotropy of the carrier distribution, higher spatial resolution (≲0.2 μm) is achieved with DEBIC than with the standard technique, EBIC (?1 μm). The DEBIC can be used to obtain diffusion lengths of the minority carriers and to evaluate the quality and uniformity of the device fabrication.Keywords
This publication has 11 references indexed in Scilit:
- Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolutionIEEE Transactions on Electron Devices, 1977
- Theory and experiment for silicon Schottky barrier diodes at high current densitySolid-State Electronics, 1977
- Theory of lifetime measurements with the scanning electron microscope: Transient analysisSolid-State Electronics, 1976
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)IEEE Transactions on Electron Devices, 1975
- Experimental and theoretical study of energy dissipation profiles of keV electrons in polymethylmethacrylateJournal of Applied Physics, 1975
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- An exposure model for electron-sensitive resistsIEEE Transactions on Electron Devices, 1974
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962