All-polymer ferroelectric transistors
- 23 August 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (9)
- https://doi.org/10.1063/1.2035324
Abstract
We demonstrate thin-film ferroelectric transistors, made entirely from organic materials that are processed from solution. The devices consist of thin ferroelectric poly(vinylidene fluoride/trifluoroethylene) films sandwiched between electrodes made of conducting poly(3,4-ethylenedioxythiophene) stabilized with polystyrene-4-sulphonic acid. On top of this stack, an organic semiconductor is applied. The ferroelectric transistors, constructed using unipolar p- or n-type semiconductor channels, have remnant current modulations of ∼103 with a retention time of hours. They can be switched in 0.1–1ms at operating voltages less than 10V.Keywords
This publication has 17 references indexed in Scilit:
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- A nonvolatile memory element based on an organic field-effect transistorApplied Physics Letters, 2004
- All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate InsulatorAdvanced Materials, 2004
- Solution-processed ambipolar organic field-effect transistors and invertersNature Materials, 2003
- Memory effects of pentacene MFS-FETSynthetic Metals, 2003
- I-Line lithography of poly-(3,4-ethylenedioxythiophene) electrodes and application in all-polymer integrated circuitsApplied Physics Letters, 2002
- Plastic transistors in active-matrix displaysNature, 2001
- Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inksProceedings of the National Academy of Sciences, 2001
- A ferroelectric transparent thin-film transistorApplied Physics Letters, 1996
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992