Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping technique
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (2), 90-93
- https://doi.org/10.1109/55.2050
Abstract
A low-energy ion doping technique has been applied to form source and drain regions of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. Phosphine gas diluted in hydrogen was discharged by RF power and magnetic field. Both phosphorus and hydrogen ions were accelerated to an energy of 5.5 keV and implanted into heated samples. The ON-OFF current ratio and the field-effect mobility of the fabricated TFTs were 10/sup 6/ and 0.12 cm/sup 2//V-s, respectively.Keywords
This publication has 6 references indexed in Scilit:
- Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping techniqueApplied Physics Letters, 1987
- Hydrogenation for PolySilicon MOSFET's by ion shower doping techniqueIEEE Electron Device Letters, 1986
- Ion implanted contacts to a-Si:H thin-film transistorsIEEE Electron Device Letters, 1986
- The characteristics and properties of optimised amorphous silicon field effect transistorsApplied Physics A, 1983
- Amorphous-silicon image sensor ICIEEE Electron Device Letters, 1980
- The effects of ion implantation on the electrical properties of amorphous siliconPhilosophical Magazine Part B, 1980