Depletion-mode IGFET made by deep ion implantation

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1 March 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 20 (3), 283-289
https://doi.org/10.1109/t-ed.1973.17641

Abstract

p-channel depletion-mode IGFET's for use as depletion-load elements have been fabricated on

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Cited by 32 articles