Influence of the depth of interface states into the insulator on the noise properties of MOS transistors
- 31 January 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (1), 21-23
- https://doi.org/10.1016/0038-1101(79)90165-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistorsSolid-State Electronics, 1977
- Memory traps in MNOS diodes measured by thermally stimulated currentSolid-State Electronics, 1976
- Measurements and interpretation of low-frequency noise in FET'sIEEE Transactions on Electron Devices, 1974
- Surface state related noise in MOS transistorsSolid-State Electronics, 1970
- Theory of low frequency noise in Si MOST'sSolid-State Electronics, 1970
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968
- Surface states and 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966