Epitaxial A1 films on GaAs(100) surfaces
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2), 393-402
- https://doi.org/10.1016/0022-0248(82)90117-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Epitaxial relationships between Al, Ag and GaAs{001} surfacesSurface Science, 1982
- Properties of aluminum epitaxial growth on GaAsJournal of Applied Physics, 1981
- Abruptness of Semiconductor-Metal InterfacesPhysical Review Letters, 1981
- New results in the study of the aluminium epitaxial growth on gallium arsenide (001)Solid State Communications, 1979
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Chemically Induced Charge Redistribution at Al-GaAs InterfacesPhysical Review Letters, 1979
- The interaction of silver and aluminium on gallium arsenide (001) surfaces: A study by mbe and associated techniquesSurface Science, 1979
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973