Effects of optically excited carriers on Raman spectra from InP
- 15 April 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8), 3064-3067
- https://doi.org/10.1063/1.333301
Abstract
Raman spectra from InP were measured at various power densities of the exciting laser. Concentration of the optically excited excess carriers Δn calculated from the frequency of the coupled longitudinal optical phonon‐plasmon mode was about 0.5–1.7×1017 cm−3 at the laser power density of 5×102 W/cm2 for InP with equilibrium carrier concentration 0.9–5×1017 cm−3. Surface recombination velocity estimated from Δn assuming that the bulk lifetime was larger than 10−7 s was 1–8×103 cm/s. Such dependence of Raman spectra on laser power density could not be observed for GaAs.Keywords
This publication has 11 references indexed in Scilit:
- LO‐Phonon‐Plasmon Dispersion in GaAs Hydrodynamical Theory and Experimental ResultsPhysica Status Solidi (b), 1981
- Light scattering from optically excited electron-hole plasmas in GaAsSolid State Communications, 1981
- Raman scattering studies of surface space charge layers and Schottky barrier formation in InPJournal of Vacuum Science and Technology, 1979
- Coupled plasmon-LO phonon modes and Lindhard-Mermin dielectric function of n-GaAsSolid State Communications, 1979
- Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfacesApplied Physics Letters, 1978
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978
- Two-phonon Raman scattering in GaAsJournal of Physics and Chemistry of Solids, 1977
- Dispersion of plasmon-phonon modes in semiconductors: Raman scattering and infrared spectraSolid State Communications, 1975
- Study of the Dispersion Relations of the Coupled Phonon-Damped Plasmon Mode inn-GaAs by Light ScatteringProgress of Theoretical Physics Supplement, 1975
- Temperature Dependence of Raman Scattering in SiliconPhysical Review B, 1970