Photoluminescence of lattice-matched In1−xGaxP1−yAsy layers on GaAs
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8), 723-724
- https://doi.org/10.1063/1.92058
Abstract
Photoluminescence of undoped n‐type and Zn‐doped p‐type lattice‐matched liquid‐phase epitaxy (LPE) In1−xGaxP1−yAsy layers on (100) GaAs has been studied at 4.2–290 K. Temperature dependences of the peak photon energy and the half‐width of the band‐to‐band transitions of the undoped layer were measured. The half‐width agreed well with the theoretical value of 1.8 kT. The band gap determined from the peak photon energy varied as 1.987−(7.284×10−4 T2)/(T+344) eV. Photoluminescence of the p‐type layer showed the band‐edge peak and another emission peak due to the recombination through Zn acceptors at 37–63 meV lower photon energy.Keywords
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