Evaluation of dark-current nonuniformity in a charge-coupled device
- 1 March 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (5), 285-287
- https://doi.org/10.1063/1.88737
Abstract
This letter investigates the relationship between stacking faults (SF’s) and dark‐current nonuniformity in a charge‐coupled device (CCD) through the measurements of cell‐to‐cell dark‐current distribution, leakage current, C‐t characteristics, and the Sirtl etching of the device. It is revealed that stacking faults are strongly connected with the nonuniformity in the dark current and are the dominant origin of the dark‐current spikes.Keywords
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