The (LuSm)3Fe5−x Ga x O12 garnet system is investigated for bubble devices requiring a nominal bubble size from one to two microns. All film compositions are grown matched on GGG substrates by compensating for the change in lattice constant with different x by varying the Lu/Sm ratio. As the gallium concentration, x, is varied from 0 to 0.84; l increases from 0.045 μm to 0.21 μm and 4πM decreases from 1750 Oe to 530 Oe. Temperature dependence of l and Q shows the applicability of this material system for device operation up to 100°C. Quasistatic margins for T‐bar propagation are given for two micron diameter bubbles in two films with different gallium concentrations.