Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
- 17 January 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (3), 033303
- https://doi.org/10.1063/1.3543632
Abstract
Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.Keywords
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