Galvanomagnetic Studies of Sn-Doped Bi. II. Negative Fermi Energies

Abstract
Studies of the Shubnikov-de Haas effect and the Hall effect in single crystals of bismuth doped with tin are extended to excess hole concentration beyond 2×1018 cm3, the upper limit achieved in earlier reported work. For dopings greater than about 3×1018 cm3, the Fermi level lies below the bottom of the L-point conduction band, so that the Fermi energy measured from this band edge is negative. The passage of the Fermi level into the forbidden gap at the L point is accompanied by the disappearance of electron quantum oscillations and by a decrease by two orders of magnitude in the magnetoresistance at 4.2°K. At about 5×1018 excess holes/cm3, a large magnetoresistance effect reappears, and low-field quantum oscillations, which are attributed to light holes at the L point, are observed. The dependence of the light-hole periods on magnetic field orientation suggests that the longitudinal mass is smaller for L-point holes [La(3)] than for electrons [Ls(3)], as is predicted by Golin's band-structure calculation. T-point hole oscillations are observed for excess hole concentrations up to 1019 cm3 and measurements have been extended to fields of 90 kOe to study their anisotropy. The anisotropy is consistent with a T-point hole surface which is a prolate ellipsoid of revolution for excess hole concentrations up to 3×1018 cm3, but the surface becomes less prolate as tin is added. Data on this surface are compared with the predictions of a six-band k·π calculation derived from Golin's pseudopotential theory, using the matrix elements at T which he calculated; good agreement is obtained. It is pointed out that the analysis of band nonparabolicity in an earlier paper which makes use of the Abrikosov-Falkovski dispersion relation underestimates the magnitude of the T45(1)T6+(3) direct gap at T. On the basis of the six-band model, the observed nonparabolicity is found to be consistent with the gap estimated by Golin.