Combining resonant tunneling diodes for signal processing and multilevel logic
- 16 May 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (20), 1684-1685
- https://doi.org/10.1063/1.99018
Abstract
A device with multiple negative differential resistances was obtained by combining two AlInAs/InGaAs based resonant tunneling diodes in series. Equal peak currents and large current peak‐to‐valley ratios were demonstrated at room temperature. Three stable operating points were identified for trilevel logic applications and a multiply‐by‐three circuit was demonstrated.Keywords
This publication has 3 references indexed in Scilit:
- Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexityIEEE Transactions on Electron Devices, 1987
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applicationsIEEE Electron Device Letters, 1987
- Heterojunction double-barrier diodes for logic applicationsApplied Physics Letters, 1987