Deep luminescent centres in electron-irradiated 6H SiC
- 31 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10), 1378-1380
- https://doi.org/10.1016/s0925-9635(97)00098-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Dominant recombination center in electron-irradiated 3C SiCJournal of Applied Physics, 1996
- Point defects in silicon carbidePhysica B: Condensed Matter, 1993
- Radiation induced defects in CVD-grown 3C-SiCIEEE Transactions on Nuclear Science, 1990