Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Abstract

Data are presented on a high‐performance native‐oxide coupled‐stripe Al_yGa_1−yAs‐GaAs‐In_xGa_1−xAs quantum well heterostructure laser realized by the recently introduced simple process of ‘‘wet’’ oxidation (H₂O vapor+N₂,≳400 °C, 3 h) of the upper Al_yGa_1−yAs confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10‐stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.