Synthesis of stoichiometric InSb thin films by a simple molecular-beam technique

Abstract

In‐Sb alloy films, deposited by a two‐source molecular‐beam technique at substrate temperatures from 500 to 700 K in ultrahigh vacuum, have been examined by Auger electron spectroscopy. The compositional analysis shows that incident atoms of In and Sb react promptly to stabilize as the compound InSb. The stoichiometry of the deposits is disturbed when the surface is saturated with the residual free atoms. The stoichiometric InSb films can be deposited under the beam‐intensity condition that J_In<J_Sb<J_In+n,n (T) =1.6×10²⁹ exp(−2.3×10⁴/T) atoms/cm² s, where n corresponds to the critical beam intensity for the condensation of antimony.