Design implications of a p-well CMOS technology for the realization of monolithic integrated pixel arrays
- 1 August 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 305 (3), 541-548
- https://doi.org/10.1016/0168-9002(91)90154-i
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Overview of radiation hardening for semiconductor detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Fully integrated CMOS pixel detector for high energy particlesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- New concepts for integrated solid state detector electronicsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Integrated low-noise amplifiers in CMOS technologyNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987