Spatial Variation of Radiative Recombination in GaAsP Wafer Revealed by Photoluminescence Image
- 15 July 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (2), 28-30
- https://doi.org/10.1063/1.1653809
Abstract
A scanned laser microscope has been used to investigate the uniformity of luminescence in GaAs0.62P0.38 wafers. Large variations in the external quantum efficiency were observed. These variations are related to topographical features in the wafer surface that are associated with misfit‐dislocation‐line structures.Keywords
This publication has 2 references indexed in Scilit:
- Scanned Laser Infrared MicroscopeApplied Optics, 1970
- Investigation of Inhomogeneities in GaAs by Electron-Beam ExcitationJournal of the Electrochemical Society, 1967