Tunnel-Diode Microwave Oscillators
- 1 April 1961
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 49 (4), 744-753
- https://doi.org/10.1109/jrproc.1961.287845
Abstract
Several experimental tunnel-diode RF oscillators which operate at frequencies from 610 to 8350 Mc are described. Power outputs an order of magnitude greater than those previously reported in the literature were obtained: 10 mw at 610 Mc, 2 mw at 1600 Mc, 0.7 mw at 2800 Mc, 0.2 mw at 5500 Mc, and 0.01 mw at 7130 Mc. Problems relating to oscillation frequency, power output, and wave shape are treated analytically.Keywords
This publication has 10 references indexed in Scilit:
- A new device using the tunneling process in narrow p-n junctionsSolid-State Electronics, 1960
- High-frequency negative-resistance circuit principles for Esaki-diode applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1960
- A 3000-Mc Lumped-Parameter Oscillator Using an Esaki Negative-Resistance DiodeIBM Journal of Research and Development, 1959
- Semiconductor Parametric Diodes in Microwave ComputersIRE Transactions on Electronic Computers, 1959
- Microwave Parametric Subharmonic Oscillators for Digital ComputingProceedings of the IRE, 1959
- Tunnel Diodes as High-Frequency DevicesProceedings of the IRE, 1959
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958
- A process for the step-by-step integration of differential equations in an automatic digital computing machineMathematical Proceedings of the Cambridge Philosophical Society, 1951
- The Clarification of Average Negative Resistance with Extensions of Its UseProceedings of the IRE, 1937
- The Nonlinear Theory of Electric OscillationsProceedings of the IRE, 1934