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Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
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Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
SR
Sergei Ruvimov
Sergei Ruvimov
ZL
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber
TS
Tadeusz Suski
Tadeusz Suski
Joel W. Ager
Joel W. Ager
JW
Jack Washburn
Jack Washburn
JK
Joachim Krueger
Joachim Krueger
CK
Christian Kisielowski
Christian Kisielowski
EW
Eicke R. Weber
Eicke R. Weber
HA
H. Amano
H. Amano
IA
I. Akasaki
I. Akasaki
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12 August 1996
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 69
(7)
,
990-992
https://doi.org/10.1063/1.117105
Abstract
No abstract available
Keywords
THREE DIMENSIONAL
THERMAL STRESS
TRANSMISSION ELECTRON MICROSCOPY
RAMAN SPECTROSCOPY
DISLOCATIONS
RAMAN SPECTRA
STRESS RELAXATION
ELECTRON MICROSCOPY
X RAY DIFFRACTION
Cited by 161 articles