Preparation and properties of green-light-emitting CdS–CuGaS2 heterodiodes
- 1 January 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (1), 246-251
- https://doi.org/10.1063/1.1662968
Abstract
Heterodiodes have been prepared by the growth of epitaxial n‐type CdS films from the component vapors on p‐type CuGaS2 substrates. In dc operation at 77°K, green light is emitted with an external quantum efficiency of 0.1%. For pulsed operation at room temperature, the efficiency is . The near‐band‐gap radiation results from electron injection into a semi‐insulating CuGaS2 region near the CdS/CuGaS2 interface. This region also controls the forward current of the diodes.
Keywords
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