Thallium and indium doped Pb1−xSnxTe by liquid phase epitaxy
- 30 June 1974
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 9 (6), 799-802
- https://doi.org/10.1016/0025-5408(74)90115-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTeApplied Physics Letters, 1974
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972