Capacitance voltage characterization of poly SiSiO2Si structures
- 31 May 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (5), 433-439
- https://doi.org/10.1016/0038-1101(80)90078-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Processing Effects on Steam Oxide HardnessIEEE Transactions on Nuclear Science, 1976
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Atmos—An electrically reprogrammable read-only memory deviceIEEE Transactions on Electron Devices, 1974
- Famos—A new semiconductor charge storage deviceSolid-State Electronics, 1974
- Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface trapsSolid-State Electronics, 1973
- Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface statesPhysica Status Solidi (a), 1972
- Lack of Photoemission Evidence for Tailing of Density of States into Energy Gap of Amorphous SiPhysical Review Letters, 1971
- Silicon-gate technologyIEEE Spectrum, 1969
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965