Real-time x-ray-scattering measurement of the nucleation kinetics of cubic gallium nitride on β-SiC(001)
- 15 November 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (20), 14686-14691
- https://doi.org/10.1103/physrevb.54.14686
Abstract
We have performed a real-time x-ray-scattering study of the nucleation of cubic GaN on SiC(001) during metal-organic molecular-beam epitaxy. By monitoring both the Ga fluorescence and the diffracted intensity from the GaN film, we determine the growth rate and crystalline quality from submonolayer coverage to 350 nm. The results exhibit scaling behavior in the growth kinetics consistent with quasi-two-dimensional island growth. In this growth mode, three-dimensional nuclei form and then grow laterally until coalescence into a continuous film occurs. After coalescence, the growth rate drops to its steady-state value. © 1996 The American Physical Society.Keywords
This publication has 23 references indexed in Scilit:
- Initial Stages of Fe Chemical Vapor Deposition onto Si(100)Physical Review Letters, 1995
- Kinetics of epitaxial growth and rougheningMaterials Science and Engineering B, 1995
- Progress and prospects for GaN and the III–V nitride semiconductorsThin Solid Films, 1993
- Kinetic model of vapour-deposited thin film condensation: nucleation stageThin Solid Films, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering B, 1988
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Adatom Capture and Growth Rates of NucleiJournal of Applied Physics, 1971
- Nucleation of Silver on Sodium ChlorideThe Journal of Chemical Physics, 1963
- Nucleation of Vapor DepositsThe Journal of Chemical Physics, 1962