Field effect studies on n-channel (100) MOSFET's at 4.2 to 77 K
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1), 98-103
- https://doi.org/10.1016/0039-6028(76)90119-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Oxide-Charge-Induced Impurity Level in Silicon Inversion LayersPhysical Review Letters, 1975
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Two-Dimensional Impurity States in an n-Type Inversion Layer of SiliconJournal of Vacuum Science and Technology, 1972
- FREEZE-OUT CHARACTERISTICS OF THE MOS VARACTORApplied Physics Letters, 1968
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968