Hydrogenated Amorphous Silicon Germanium Alloys Prepared by Triode rf Glow Discharge
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A), L276
- https://doi.org/10.1143/jjap.25.l276
Abstract
The a-SiGe:H films produced in the triode system possess better photoconductivity, lower density of dangling bond and very sharp Urbach tail as compared with film produced in the conventional diode system. Such superior properties are attributed to their homogeneous structures, as confirmed by hydrogen evolution experiments and TEM observation.Keywords
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