Excitation density dependence of photoluminescence in GaN:Mg
- 5 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (1), 70-72
- https://doi.org/10.1063/1.120647
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- Theory of Point Defects and InterfacesMRS Proceedings, 1996
- Reactive MBE Growth of GaN and GaN:H on GaN/SiC SubstratesMRS Proceedings, 1996
- On p-type doping in GaN—acceptor binding energiesApplied Physics Letters, 1995
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectraPhysical Review B, 1978
- Optical Properties of Cd-O and Zn-O Complexes in GaPPhysical Review B, 1968
- New Red Pair Luminescence from GaPPhysical Review B, 1968
- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966