InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range
- 6 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6), 548-550
- https://doi.org/10.1063/1.103643
Abstract
We report the operation of strained‐layer InxGa1−x As/GaAs 50‐ and 100‐period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self‐electro‐optic effect devices at 1.064 μm.Keywords
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