Plasma enhanced deposition of ‘silicon nitride’ for use as an encapsulant for silicon ion-implanted gallium arsenide
- 1 January 1984
- Vol. 34 (1-2), 315-320
- https://doi.org/10.1016/0042-207x(84)90148-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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