A model of rf sputtering systems is qualitatively described. The model allows simulation of an entire system so that the deposition process can be related to externally measured parameters. The steps in deriving the model are outlined, with some key equations and underlying assumptions given. The model is based on the physical processes that occur in the chamber, such as ionization, sputtering, and material transport. This model relates these processes to electrical-circuit parameters and to resultant film-deposition conditions. Theory and experiment are compared for a system at 40 MHz to show reasonable agreement with the model. As an example of use of the model, the effects of phase and reemission on secondary electron energy are calculated, showing that the damaging effects of high-energy electrons incident on the substrate can be minimized by use of zero-phase and high reemission levels.