Basic parameter measurement and channel broadening effect in the submicrometer MOSFET

Abstract

An improved measurement technique of the basic MOSFET parameters is presented. This method is based on the measured data of two identical devices with different channel lengths. The effect of series resistance and channel length can be separated from the mobility measurement. This is the only method in which it has been proved that mobility can be measured on a short channel device. A new technique of channel length and series resistance is done by the measurement of newly defined quantity, RTK, which is the equivalent channel length that includes the effect of series resistance. Because of the success of this measurement method, a new phenomena, which we call channel broadening effect, was investigated. Its effects on the submicrometer device characteristics were investigated.