MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectrics

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11 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.2000.904251

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Keywords

This publication has 1 reference indexed in Scilit:

Stable zirconium silicate gate dielectrics deposited directly on silicon
Applied Physics Letters, 2000

Cited by 6 articles