Backscattering in carbon nanotubes: Role of quantum interference effects
- 26 November 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (22), 3690-3692
- https://doi.org/10.1063/1.1421643
Abstract
The backscattering contribution to the conductivity, irrelevant for metallic single-walled carbon nanotubes, is proved to become more significant for doped semiconducting systems, in agreement with experiments. In the case of multiwalled nanotubes, the intershell coupling is further shown to enhance the contribution of backscattering for “metallic” double-walled, whereas it remains insignificant for “metallic/semiconducting” double-walled systems.Keywords
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This publication has 24 references indexed in Scilit:
- Electrochemical tuning of electronic states in single-wall carbon nanotubes studied by in situ absorption spectroscopy and ac resistanceApplied Physics Letters, 2001
- Disorder-induced electron localization in metallic carbon nanotubesPhysical Review B, 2001
- Resonant Electron Scattering by Defects in Single-Walled Carbon NanotubesScience, 2001
- Theory of transport in carbon nanotubesSemiconductor Science and Technology, 2000
- Disorder, Pseudospins, and Backscattering in Carbon NanotubesPhysical Review Letters, 1999
- Carbon Nanotube Quantum ResistorsScience, 1998
- Fractal character of eigenstates in weakly disordered three-dimensional systemsPhysical Review B, 1985
- Origin of the Bohm-Aharonov Effect with Half Flux QuantaPhysical Review Letters, 1984
- Inverse participation ratio in 2+? dimensionsZeitschrift für Physik B Condensed Matter, 1980
- Maximum Metallic Resistance in Thin WiresPhysical Review Letters, 1977