Transverse reduced mass of theandtransitions in silicon
- 15 June 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (12), 5999-6000
- https://doi.org/10.1103/physrevb.15.5999
Abstract
The small transverse effective mass determined for the and transitions of silicon from electroreflectance by Grover and Handler is shown to follow from the band structure of this material.
Keywords
This publication has 6 references indexed in Scilit:
- Symmetry analysis and uniaxial-stress effect on the low-field electroreflectance of Si from 3.0 to 4.0 eVPhysical Review B, 1976
- Electroreflectance of siliconPhysical Review B, 1974
- Interband Masses of Higher Interband Critical Points in GePhysical Review Letters, 1973
- Piezo-optical Evidence forTransitions at the 3.4-eV Optical Structure of SiliconPhysical Review Letters, 1972
- Critical-Point Structure in Photoelectric Emission Energy DistributionsPhysical Review B, 1968
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966