Gas source MBE growth of InP
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 176-180
- https://doi.org/10.1016/0022-0248(89)90376-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yJournal of Applied Physics, 1984
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980