Application of high power silicon carbide transistors at radar frequencies
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Optimum semiconductors for high-power electronicsIEEE Transactions on Electron Devices, 1989