Electronic structure of the diamond (111) 1×1 surface: Valence-band structure, band bending, and band gap states

Abstract

Photoemission, LEED, and AES measurements were made on the mechanically polished (111) surface of a type IIa diamond. No emission from filled states in the fundamental gap was found over the photon energy range 13.3 eV?h/ω?200 eV. This result, coupled with the sharp 1×1 LEED patterns which were obtained and the relative cleanliness (of elements which can be detected by AES) of the diamond (≲1 at.% oxygen, p‐like) versus the lower (s‐like) portion of the diamond valence band indicates comparable cross sections at a photon energy h/ω=160 eV.