Investigations of Surface Recombination Velocities on Germanium by the Photoelectromagnetic Method

Abstract

The Photoelectromagnetic, or “Deathnium Meter,” method has been used to detect changes in surface recombination velocity on germanium produced by various chemical surface treatments and by heating to temperatures of 65°–100°C. The method consists of measuring the open circuit voltage due to the P.E.M. effect. Measurements may be made rapidly; small changes in specimen thickness caused by a surface treatment may be ignored; the method can be used to investigate surfaces covered by opaque protective coatings. While it was found that the open circuit voltage depended on surface recombination in a manner which agreed qualitatively with theory, the agreement was not good enough to permit calculation of quantitative values of recombination velocity.