5C3 - GaAs as an electrooptic modulator at 10.6 microns
- 1 August 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 2 (8), 243-245
- https://doi.org/10.1109/jqe.1966.1074037
Abstract
The electrooptic properties of a number of semiconductors were investigated. Of particular interest was the possibility of using these materials for modulation of infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a Co 2 , 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at \lambda > 10\mu .Keywords
This publication has 4 references indexed in Scilit:
- LiNbO3: AN EFFICIENT PHASE MATCHABLE NONLINEAR OPTICAL MATERIALApplied Physics Letters, 1964
- Electro-Optic Effect of Gallium ArsenideApplied Optics, 1963
- NONLINEAR DIELECTRIC PROPERTIES OF KTaO3 NEAR ITS CURIE POINTApplied Physics Letters, 1963
- Electro-Optical Effect of ZincblendeJournal of the Optical Society of America, 1961